Abstract
Di erent semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of di erent III V quantum dots embedded in SiO2 and Si3N4 made by sequential ion implantation and millisecond range ash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III V quantum dots can be formed in di erent matrices. Formation of crystalline III V quantum dots was con rmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a singleash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
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