Abstract
A systematic study of the etch characteristics of GaN, AlN, and InN has been performed with boron halide- (BI3 and BBr3) and interhalogen- (ICl and IBr) based inductively coupled plasmas. Maximum etch selectivities of ∼100:1 were achieved for InN over both GaN and AlN in the BI3 mixtures due to the relatively high volatility of the InIx etch products and the lower bond strength of InN. Maximum selectivities of ∼14 for InN over GaN and <25 for InN over AlN were obtained with ICl and IBr chemistries. The etched surface morphologies of GaN in these four mixtures are similar or better that those of the control sample.
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