Abstract
Abstract Beryllium chalcogenides are semiconductors with a large band gap. They have a higher-degree of covalent bonding than all of the other II–VI compounds. The bond energies of BeTe, BeSe and BeS are comparable to those of GaN. Due to their band gaps and their lattice constants they can be incorporated in quaternary mixed crystals which are lattice matched to GaAs. The hardness of II–VI materials containing beryllium offers new possibilities to enlarge the lifetime of laser diodes, emitting in the green and blue spectral range. First light-emitting diodes (LEDs) with beryllium as a constituent have been produced on GaAs substrates by molecular beam epitaxy (MBE). Double heterostructure devices were realized with quantum wells either of BeZnSeTe, ZnSe or BeZnSe. Special ohmic contacts consisting of BeTeZnSe graded superlattices were employed. Although for the first devices the growth conditions were not optimized, the lifetime at typical operating currents was very promising.
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