Abstract
Detailed experimental data taken for punch through (PT) and non punch through (NPT) IGBTs are presented. The test program covered IGBT devices rated for 100-600 A and 600-1200 V from different manufacturers. The forward conduction drops and switching behavior of the IGBTs are examined over a temperature range of 4.2 to 295 K. Physical behavior at low junction temperatures is analyzed. Different behavior of the two structures at cryogenic temperatures is highlighted and the better performances of the NPT technology are shown.
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