Abstract
We show that the detailed atomic structure of vacancy-impurity complexes in Si can be experimentally determined by combining positron lifetime and electron momentum distribution measurements. The vacancies complexed with a single impurity, V -P and V -As, are identified in electron irradiated Si. The formation of native vacancy defects is observed in highly As-doped Si at the doping level of 1020 cm23. The defects are identified as monovacancies surrounded by three As atoms. The formation of a V -As3 complex is consistent with the theoretical descriptions of As diffusion and electrical deactivation in highly As-doped Si. [S0031-9007(99)08546-4]
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