Abstract
Dislocation responsible for leakage current in a halide vapor phase epitaxial (HVPE) (001) β-Ga2O3 Schottky barrier diode (SBD) was explored via ultrahigh-sensitive emission microscopy, synchrotron X-ray topography, and scanning transmission electron microscopy (STEM). Light emission due to the reverse leakage current was observed at the dislocation position with a leakage current of −0.98 μA at −100 V. Moreover, the dislocation is visible for the g vectors of 605 and 225; however, it is invisible for and . The b was determined to be from the g·b invisible criteria. This dislocation was determined mixed-type.
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