Abstract
The complete analysis of I-V characteristics and set of basic parameters for betavoltaic silicon batteries under Nickel-63 irradiation in the temperature range from 213 to 330 K is carried out using a universal physical TCAD model. The standard TCAD optical generation model was adopted for simulation of electron-hole generation for beta particles irradiation. The pn-junction diode energy converters with real Gaussian doping profiles are considered. The simulated current-voltage characteristics of the 63Ni-Si betavoltaic elements are in good agreement with the measured characteristics.
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