Abstract

We introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform unconstrained by crystalline symmetries. The designs proposed advantageously leverage the large, complete, and isotropic photonic band gaps provided by hyperuniform disordered structures. An integrated design for a compact, sub-volt, sub-fJ/bit, hyperuniform-clad, electrically controlled resonant optical modulator suitable for fabrication in the silicon photonics ecosystem is presented along with simulation results. We also report results for passive device elements, including waveguides and resonators, which are seamlessly integrated with conventional silicon-on-insulator strip waveguides and vertical couplers. We show that the hyperuniform-disordered platform enables improved compactness, enhanced energy efficiency, and better temperature stability compared to the silicon photonics devices based on rib and strip waveguides.

Highlights

  • Silicon waveguide technology has encompassed several waveguide architectures such as rib and strip waveguides[12,13,14], corrugated and slot waveguides[15,16,17,18], and photonic band gap (PBG) structures[19,20,21,22]

  • We show that hyperuniform disordered solids (HUDS) resonators as compared to standard micro-ring resonators (MRRs) or Mach-Zehnder interferometers (MZIs) exhibit less temperature-dependent resonant wavelength shift (TDRWS) and increased compactness

  • The results reveal promising prospects for device density improvements of several times and a lower power consumption per bit compared to silicon optical modulators based on MRRs and MZIs

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Summary

Introduction

Silicon waveguide technology has encompassed several waveguide architectures such as rib and strip waveguides[12,13,14], corrugated and slot waveguides[15,16,17,18], and photonic band gap (PBG) structures[19,20,21,22]. The HUD platforms promise to address two key challenges associated with the cost-effective application of CMOS-compatible optical filters to optical interconnects: device density per unit chip area (as compared to rib and strip waveguide platforms) and improved layout flexibility[31,32,33,34,35,36] (as compared to PhC platforms) Another advantage of the disordered systems when compared to their periodic counterparts is increased flexibility to locally-engineer the structure to create high-quality factors resonant defects, narrow waveguides with arbitrary curvatures and arbitrarily high-order power splitters[32,33,34,35].

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