Abstract
The scintillation properties of a hydrothermal method grown zinc oxide (ZnO) crystal are evaluated for extreme ultraviolet (EUV) laser excitation at 13.9nm wavelength. The exciton emission lifetime at around 380nm is determined to be 1.1ns, almost identical to ultraviolet laser excitation cases. This fast response time is sufficiently short for characterizing EUV lithography light sources having a few nanoseconds duration. The availability of large size ZnO crystal up to 3in. is quite attractive for future lithography and imaging applications.
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