Abstract
Zinc oxide single crystals of high purity have been grown by the hydrothermal method under a partial pressure of oxygen, using a platinum-lined autoclave and ultra-pure reagents. The stoichiometry of the grown crystals was investigated by employing coulometric technique to detect a small deviation in the stoichiomtric constituent towards Zn 1+ x O. The concentration of the excess Zn atoms was accurately determined from 0.8 to 1.7 ppm and the electrical resistivity of the as-grown crystals was measured as of the order of 10 p8 Ω cm.
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