Abstract
H2-based plasma process has been controversial for a long time as it’s reported the high H2-based plasma could result in device instability[1]. In this work, we investigated various H2 related etch processes in advanced logic technology from the point of view of selectivity, defect, reliability and yield performance. Due to the chemi-sorption and recombination of H atom at Si [2], high temperature(>250℃) H2 remote plasma can be used to minimize the material loss for process where oxygen is forbidden, while low temperature(<60℃) H2-based plasma process can be used in Si related etch processes with the improved selectivity to either mask or stop layer. Nevertheless, the low temperature H2 plasma directly contacting the exposed metal might result in plasma damage such as PID (plasma induced damage).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
