Abstract
The hydrogen passivation of (100) silicon surfaces is characterized as a function of the chemical treatment by means of multiple internal reflection infrared (IR) spectroscopy using a novel sample preparation method. The samples are etched in different solutions (aqueous , , , , and buffered ) and investigated with and without DI water rinsing. The stability of the surfaces against oxidation and the buildup of a hydrocarbon contamination layer during storage in cleanroom air are examined. The IR peak at 2123 cm−1 is related to a coupling mode between dihydrides and neighboring monohydrides.
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