Abstract
Five new cobalt - hydrogen-related deep levels in cobalt-doped float-zone n-type silicon are identified. The levels are formed after wet chemical etching, polishing or remote plasma hydrogenation. We correlate the levels with the injection of hydrogen into cobalt-doped silicon by deep-level transient spectroscopy (DLTS) depth profiling and capacitance - voltage analysis. Cleaving the sample, without any wet chemical treatment, gives only one DLTS level, the well known Co acceptor at eV. The hydrogen - cobalt complexes show different thermal stabilities. One is stable up to 470 K, but all other defects anneal out at 400 K and lead to an increase of the cobalt acceptor concentration.
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