Abstract
Secondary ion mass spectrometry is applied to the detection of hydrogen in individual diamond grains 1–4 µm in diameter. In the analysis, the primary Cs ion beam was fine-tuned at diameters of 50–200 nm on the surface, and then a combination of presputtering and spot analysis was carried out along a line defined in the scanned 12C image with a high lateral resolution. The intensity ratios of (H/12C) in the (111) and (100) planes were determined as having values of 1.36×10-2 and 3.2×10-3, respectively. The value obtained in the (100) plane is background in the analysis. The results demonstrate the potential of the analytical technique for the detection of impurities in materials science.
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