Abstract
In this letter, we demonstrate a new concept of threshold selector by combining Ag-based selector with NbO x insulator metal transition (IMT) selector. To overcome intrinsic limits of slow turn-off speed ( $> 1\mu \text{s}$ ) of the Ag-based selector, we adopted NbO x IMT selector with fast turn-off speed. The hybrid device exhibits excellent selector characteristics, such as extremely low off-current ( $ ). It shows excellent read-out margin (>75% at >210 word lines) in a fast sequential operation of cross point memory array.
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