Abstract
Defect-free tribochemical removal of gallium arsenide (GaAs) was demonstrated in vacuum, dry air, and various humidity environments by scratching with a SiO2 tip. The removal depth increases with increasing relative humidity (1–90%), and reaches its maximum value in water. A perfect crystal matrix without defects was observed in the cross section of the scratched groove using a transmission electron microscope. A model based on reactive tip scratching-induced oxidation, water solubility of debris, and adhesion effect was proposed to interpret tribochemical removal of GaAs surface. This study provides new insights into defect-free and site-controlled nanofabrication of GaAs.
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