Abstract
Delamination of a thin Si layer from an Si wafer by high dose H/sup +/ implantation is studied. Hydrogen ions are implanted into (100) p-Si through a 100 nm thick oxide layer at 100 keV with different doses. With annealing at temperatures above 500/spl deg/C, splitting of the Si layer appears at a depth of 0.85 /spl mu/m at doses above 5.0/spl times/10/sup 16/ ions/cm/sup 2/. The width of the slit gap ranges from 20 to 30 nm. Average roughness of the split layer surface is 7.3 nm. However, point defects still exist at the surface of the Si layer after splitting of the layer at 600/spl deg/C. This defect decreases in density with increasing temperature and disappears at 900/spl deg/C.
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