Abstract

We report here the charge cloud shape produced by an X-ray photon inside the charge-coupled device (CCD) as well as a method to measure it. The measurement is carried out by using a multi-pitch mesh which enables us to specify the interaction position of X-rays with subpixel resolution not only for single events but also for split events. Split events are generated when the X-ray interaction position is close to the pixel boundary. The width of this area depends on the apparent charge size. Finally, we measured the signal output from the pixel according to the interaction position of X-rays. By differentiating this function, we obtain, in detail, the charge cloud shape which can be well represented by an asymmetric Gaussian function. The charge cloud size for Al-K X-rays is 0.7×1.4 µm2 while that for Mo-L X-rays is 0.8×1.4 µm2. The size of the photoelectron in Si produced by these X-rays is about 0.04 µm. Taking into account the mean absorption length for these X-rays in Si, diffusion process in the depletion region cannot explain the charge cloud size. The asymmetry of the charge cloud probably arises from the asymmetry of the electric field in the CCD.

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