Abstract
The noise parameter α T = S I(ƒ) (4kTg m) of n-channel JFETs was measured as a function of the voltage V GS − V P with the temperature T as a parameter between 150 and 300°K. It was found that α T could be approximated by the formula α T ⋍ ( 300 T )α 300 , indicating the presence of hot electron effects.
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