Abstract
We use the recently developed chemically resolved electrical measurements (CREM) to sensitively measure hot-electron transport characteristics in thin dielectric layers. By comparing bare gate-oxide layers, SiO2 and SiON, pronounced differences are revealed that are absent from standard contact measurements and from CREM conducted on top metallic pads. The “on pad” and standard measurements obey a similar defect-assisted “Poole–Frenkel” transport, whereas I∼Vα characterizes the hot-electron transport through the bare overlayer, with a clear thickness dependence of α. These unique CREM features offer useful advantages in gate-oxide characterization.
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