Abstract
A theory of hot electron noise in semiconductors is proposed, which is appropriate to the case of strong interelectronic collisions. The effect of interelectronic collisions is taken into account by assuming the displaced Maxwellian distribution and the fluctuations in drift velocity and electron temperature caused by the lattice scattering are treated by the master equation method. The low frequency spectral density of noise current is calculated for the polar optical scattering. It is shown that owing to the electron temperature fluctuation the longitudinal diffusion coefficient becomes much larger than the transverse diffusion coefficient with increase in the electron temperature.
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