Abstract
We present the first results of experimental study of free carrier heating in a degenerate semiconductor when the carriers were excited by CO2 laser light and microwave radiation of 10 and 35 GHz. Tunnel GaAs p−n diodes were used as objects under investigation. It is shown that the carrier heating reduces the dark tunnel current, while at high enough forward bias the thermo-diffusive current is responsible for the formation of the signal. The magnitude of the electromotive force arising under the microwave irradiation depends linearly on the power and increases with the decrease of the semiconductor lattice temperature. It is nearly independ of the microwave frequency.
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