Abstract
This paper describes the rectification responses exhibited by two kinds of SiGe HBTs when electromagnetic interference (EMI) is injected at the base of the transistor. The variation of the EMI induced DC offset after hot carrier stress is also studied. The experimental results show that the EMI response of a single SiGe HBT is different from that of a Si BJT. With interference present, the DC current gain increases at low base-emitter (BE) bias and decreases at larger VBE values. The absence of AC crowding induced DC crowding along with the base recombination current accounts for the increase of current gain. The base-width effect and the high-injection effect tend to decrease the gain in presence of interference. The simulation results show that the Gummel–Poon model is able to quantitatively model the EMI response of a SiGe HBT.
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