Abstract
A theoretical study using the nonequilibrium statistical operator method is performed to investigate the ultrafast transient transport properties of photoexcited carriers in wurtzite InN subjected to electric fields up to 20 kV/cm. The evolution toward the steady state of the drift velocity of carriers (electrons and holes) and nonequilibrium temperature (carriers and phonons) is determined. The transient regime occurs at the subpicosecond scale with maxima and minima in the hole and electron drift velocities.
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