Abstract
The effect of strong electric field in disordered systems with weak localization of electron states is considered. The dominant role of the heating effects is demonstrated. In the low temperature region power law dependence of the hopping conductivity σ on electric field E is suggested and the experimental data on MOSFET structures are analyzed. At extremely low temperatures Mott's type exponential dependence ln σ(E) ∼ [-(E) − 1 3 ] is found.
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