Abstract
ABSTRACTCharge transport in a-Si:H films is studied by measuring the intensity and the rate of decay of the transient photocurrent with optical bias illumination. The optical bias enhancement of the transient photocurrent due to the probe beam decreases at first as the temperature is decreased, reaches a minimum at about 21OK, and then increases as the temperature is further decreased. This observation, together with the decay time measurements, indicates a change in the mechanism of charge propagation from conduction band transport at high temperature to hopping conduction in the low temperature. A theory of hopping conduction in tail states is developed to explain the experimental results. A quantitative comparison of the theoretical and experimental results is made to determine the localization length of the tail states.
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