Abstract
Uniaxial strain technology is an effective way to improve the performance of nano-scale CMOS devices. In this paper, the relationships between hole scattering rates and the magnitude of stress and the orientation in uniaxiallystrained Si were studied on the basis of the six-bands kp model, Fermi’s golden rule and the theory of Boltzmann collision term approximation. Based on the model of hole effective masses and hole scattering rates, the models of hole mobility as a function of the magnitude of stress for arbitrary orientation/typical plane uniaxially-strained Si were established. Our analytic models and quantized results will provide significant theoretical reference for the understanding of strained materials physics and its design.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
