Abstract
We investigate magnetotransport properties of thin (Ga,Mn)Sb layers in a field-effect structure. By changing the hole concentration p in the channel by applied electric fields, we establish the relationship between the Curie temperature TC and p, which shows γ of 1.3–1.6 in TC ∝ pγ. The exponent γ is several times larger than γ ∼ 0.2 reported previously for (Ga,Mn)As. Analyses based on the p-d Zener model taking into account of non-uniform hole distribution in the channel shows that the lager γ is explained by the presence of hole accumulation at the interface of (Ga,Mn)Sb and the gate insulator.
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