Hole-concentration dependence of electrical resistivity in the (Bi, Pb) 2(Sr, La) 2CuO 6+δ quantitative evaluation with angle-resolved photoemission spectroscopy

Abstract

Relaxation time of Bloch states at the Fermi level ( τ F ), Fermi velocity ( v F ), and mean free path ( l F ) of the conduction electrons in the (Bi, Pb) 2(Sr, La) 2CuO 6+δ (Bi2201) superconductors with various hole-concentration ( p) were determined by the angle-resolved photoemission spectroscopy (ARPES) measurement with high energy- and momentum-resolutions; Δ E = 10 meV and Δ k = 0.005 Å −1. We found that τ F at k F along ( 0 , 0 ) – ( π , π ) cut is kept constant over a wide Hole-concentration range while it in the vicinity of ( π , 0 ) is drastically shortened with decreasing p and eventually reaches nearly zero in the under-doped sample with the transition temperature of 27 K. By calculating electrical resistivity and comparing it with the measured one, we confirmed that τ F , v F , and l F determined by the ARPES measurement can be used for the quantitative estimation of the electrical transport properties, such as the electrical resistivity, in high- T c cuprates.