Abstract
The incorporation of excess Cd into CdS was studied by performing Hall effect and resistivity measurements on single-crystal samples in equilibrium with known partial pressures of Cd vapor at temperatures between 400 and 1000°C. The carrier concentration varies as p 1 3 Cd at temperatures of 700°C and above. This is interpreted in terms of a doubly ionized native donor, probably a sulfur vacancy. The incorporation energy of the doubly ionized defect into the CdS lattice is found to be 1.70 eV. The second donor ionization energy is estimated to be ≦ 0.24 eV, probably ≈ 0.12–0.16 eV. The Hall mobilities ∝ T −1.4 for 400°C ≦ T ≦ 1000°C. This agrees fairly well with the theoretical temperature dependence calculated by reciprocally combining mobilities calculated by considering polar scattering by longitudinal optical modes, deformation potential scattering, and piezoelectric scattering by acoustic modes.
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