Abstract
Avalanche photodiodes (APDs), when compared to PIN photodiodes, offer a large improvement in sensitivity; about 10 dB higher sensitivities are expected at 20 Gbit/s. Very good performances have already been demonstrated at 10 Gbit/s: -27,6 dBm, -27 dBm, and more recently -29,4 dBm. For higher bit rates, lateral illumination has been proposed, as for PIN photodiodes, to achieve simultaneously high speed and high responsivity. This paper describes the simulation and the realization of such waveguide APDs, and high-frequency characteristics are given.
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