High-rate quantum key distribution at short wavelength: Performance analysis and evaluation of silicon single photon avalanche diodes

Abstract

Experimental results obtained with silicon single photon avalanche diodes (SPADs) in quantum key distribution (QKD) at short wavelengths reveal remarkable potential for application in local area networks (LAN) and for free-space transmission at high rate. Actual application prospects, however, depend on the performance level and on the suitability of practical systems using the available silicon SPAD devices. They can be essentially divided in two groups: planar p-n junction structures with a thin depletion layer (typically 1 μm); and reach-through structures with a thick depletion layer (from 20 μm to 150μm). The physical mechanisms that control the device behaviour were investigated and the effect on the key parameters of the detector (quantum detection efficiency, dark counting rate, afterpulsing probability and photon-timing jitter) were thoroughly assessed. A quantitative analysis was made of the influence of such parameters on the quantum bit error rate (QBER). Actual parameters were measured and the attainable performance and system suitability of the two device types evaluated. Comparable performance is obtained, but from a system viewpoint thin SPADs appear inherently better suited to high-rate QKD applications, because of their faster response time, ruggedness, low voltage, low power dissipation and fabrication technology, which is simple, efficient, economical and compatible with monolithic integration of detector and associated circuits.