Abstract
We have successfully grown GaAsN and InGaAsN layers on GaAs substrate using atmospheric-pressure metalorganic vapor-phase epitaxy (MOVPE). Dimethylhydrazine and tertiarybutylarsine have been employed as sources of nitrogen and arsenic, respectively. To investigate the incorporation behavior of nitrogen [N] in GaAsN and InGaAsN layers as a function of ambient gas in the reactor, growth was performed in the presence of hydrogen H2 and nitrogen N2 gases. Good structural quality and surface morphology have been obtained with both gases. Furthermore, with N2 ambient gas, an enhancement of nitrogen incorporation has been observed. The nonradiative carrier lifetime is about 25 ns and is independent of the ambient gas used. This value is acceptable for laser applications.
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