Abstract
Using a hybrid growth combining molecular-beam epitaxy (MBE) and subsequent liquid phase epitaxy (LPE), a high-quality GaAs layer having high crystallinity and no pits due to Si dissolution by Ga melt has been obtained over the entire Si substrate (40×20 mm2 ). Si dissolution was found to be caused by a partial As desorption from the surface of MBE-grown GaAs/Si during the preheating for LPE. It could be eliminated by keeping the LPE growth temperature (TL) below 750 °C. This had to be balanced with crystallinity which improved at higher TL temperatures. An optimum TL range for the hybrid growth was established around 750 °C. Furthermore, it was shown that high-crystallinity in MBE-grown GaAs/Si led to high quality in hybrid-grown GaAs/Si. Our results also indicate that further improvement in crystalline quality of GaAs/Si is possible by MBE-LPE hybrid growth.
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