Abstract
Molecular beam epitaxy techniques were used to grow a quantum-cascade laser (QCL) heterostructure based on an In0.53Ga0.47As/Al0.48In0.52As heteropair lattice-matched with an InP substrate. InP layers were used to form an optical waveguide. The obtained QCL heterostructure ensured room-temperature lasing in the 8-μm wavelength range at a maximum output optical power of 0.45 W from one facet in a standard ridge geometry of the Fabry–Perot cavities formed by cleaved facets.
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