Abstract
The parameters of high-power laser diodes operating at λ=0.94 μm, based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs quantum-dimensional heterostructures, are reported. The laser diodes manufactured using an optimized MBE technology and specially selected dopant profiles are characterized by a lowthreshold current density, a high optical output power, a high differential quantum efficiency, and a long working life (above 10000 h).
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