Abstract
Pentacene thin-film transistors (TFTs) with titanium silicon oxide (Ti1−xSixO2) gate insulator have been fabricated to realize high field-effect mobility at practical voltages. The Ti1−xSixO2 films deposited by rf sputtering exhibited a flat surface and high dielectric constant. The pentacene TFT with the Ti1−xSixO2 gate insulator had high performance with a threshold voltage of −1.6V, an inverse subthreshold slope of 0.13V∕decade, and a current on/off ratio of 107 at a voltage of −10V. The field-effect mobilities of higher than 1cm2∕Vs were obtained in the whole voltage range of −2to−15V.
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