High-Performance and Low-Voltage Current Sense-Amplifier Using GAA-CNTFET with Different Chirality and Channel

Abstract

AbstractThis paper represents the Current sense amplifier based on Gate all around Carbon nanotube field-effect transistor (GAA-CNTFET). Every 18 months, the number of transistors in an integrated circuit double according to Moore’s law. This increased number of transistors means the size of transistors will decrease as a result of which the circuit size decreases. As the size of the transistor decreases below 10 nm, the traditional MOSFETs show multiple limitations, thereby leading to the development of CNTFETs to replace these MOSFETs. Parametric analysis has been efficiently performed on parameters like Power, Delay, and Power delay product by varying chirality vectors (n, m). Four unique configurations have been used as Single-channel single chirality (SCSC), double channel single chirality (DCSC), Single channel double chirality (SCDC), Double channel double chirality (DCDC) in this work. In this paper, it is studied that the nano-scale domain CNTFETs devices are better than MOSFETs due to less delay and power. It is observed that the delay of the Current sense amplifier decreases when increasing the chirality and number of CNT in the channel. Delay, Power, PDP analysis has been performed by varying tox and Kox.KeywordsCurrent-sense amplifierCNTCNTFETChiralitySRAM