Abstract
In this work, GaN-based p-n diodes with thick drift layers grown by metal organic vapor phase epitaxy (MOVPE) on sapphire were investigated. We discuss their characteristics and develop a simulation model to fit the experimental data. The fabricated diodes feature almost linear ohmic p-GaN contacts, a near-unity ideality factor, a high electron mobility cm2 V−1 s−1, low m cm2 and a large breakdown voltage V.
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