Abstract
The fabrication and microwave performance of InP/InGaAs heterojunction insulated-gate FETs (HIGFETs) using plasma-enhanced chemical vapor deposition (PECVD)-deposited SiO/sub 2/ as the gate insulator are discussed. Extrinsic transconductances as high as 240 mS/mm were obtained. Although these devices had a drain current drift of 20% under DC bias, when operated at 5 GHz they exhibited negligible drain current drift. The observation of high transconductance and stable microwave performance makes these HIGFETs ideal candidates for microwave power applications.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
