Abstract
Summary form only given. Spin valves in the current-perpendicular-to-plane (CPP) mode, whose output voltage increases as the element size decreases, are the promising candidates for over 100 Gbit/inch/sup 2/ read heads. We have already verified an increase in the output by insertion of the nano-oxide layer (NOL) in the single-type spin valves (SSV) for the CPP elements (K. Nagasaka et al, J. Appl. Phys., vol. 89, p. 6943, 2001). It may be because sense current flows in the narrow regions due to the inhomogeneity of the NOL, which makes the effective element size smaller. In this paper, we examine the NOL insertion in the dual-type spin valves (DSV) that yield larger output when applied to the CPP elements than the SSV due to increment of the interfaces between magnetic and non-magnetic layers.
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