Abstract
We report a highly sensitive thin-film transistor (TFT)-based temperature sensor with an ambient air-processed organic-inorganic hybrid perovskite, methylammonium lead iodide (MAPbI3), semiconductor. The threshold voltage of MAPbI3 TFTs shows a strong linear temperature dependency with a temperature coefficient of −200±10 mV/K – making them good temperature sensors. TFTs with an inorganic (PbI2)-rich or organic (MAI)-rich semiconductor exhibit less temperature sensitivity than those with the stoichiometric MAPbI3 film – thus attributing the high temperature sensitivity to trap states in the hybridized MAPbI3 perovskite structure. We show that ambipolar transport in MAPbI3 TFTs can be exploited to widen their temperature sensing window and demonstrate high sensing capability of a temperature sensor, consisting of a single MAPbI3 TFT in the diode configuration (with drain and gate shorted).
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