Abstract
The excellent resistive switching (RS) performances based on Ta/MoOx/Pt device were achieved by controlling the deposition temperature and the thickness of MoOx. The results of X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectroscopy confirmed that the deposition temperature has a significant influence on the MoOx crystalline form and oxygen vacancy content. Compared with the samples deposited at other temperatures (room temperature, 300 °C and 500 °C), MoO3 sputtered at 400 °C obtained nanocrystals with appropriate oxygen vacancies, resulted in improved RS performance. When the 50 nm MoO3 was sputtered at 400 °C, the device showed an ultra-low RS current (10 μA), large HRS/LRS ratio (>104), high endurance (108 cycles) and stable data storage capacity at 85 °C (10 years). This research provides a simple method to design high-performance memory devices.
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