Abstract

In this study, we reported a 36% improvement in the performance of inverted solar cells as a result of increased short-circuit current (JSC) obtained using a composition of zinc oxide (ZnO) and reduced graphene oxide (RGO) as an n-type buffer layer. RGO-ZnO nanocomposites show higher electron conductivity than intrinsic ZnO; moreover, they show reduced contact resistance at the interface between the active layer and n-type buffer layer. These factors prevent carrier loss resulting from defects and recombinations in the device, thereby significantly increasing the JSC value for the device. Thus, an efficiency of 4.15% was achieved for inverted solar cells with a controlled RGO-ZnO nanocomposites layer.

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