Abstract
Traditional black silicon solar cells show relatively low efficiencies due to the high surface recombination occurring at the front surfaces. In this paper, we present a surface modification process to suppress surface recombination and fabricate highly efficient industrial black silicon solar cells. The Ag-nanoparticle-assisted etching is applied to realize front surface nanostructures on silicon wafers in order to reduce the surface reflectance. Through a further tetramethylammonium hydroxide (TMAH) treatment, the carrier recombination at and near the surface is greatly suppressed, due to a lower surface dopant concentration after the surface modification. This modified surface presents a low reflectivity in a range of 350–1100nm. Large-area solar cells with an average conversion efficiency of 19.03% are achieved by using the TMAH treatment of 30s. This efficiency is 0.18% higher than that of standard silicon solar cells with pyramidal surfaces, and also a remarkable improvement compared with black silicon solar cells without TMAH modifications.
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