Abstract
The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>105), low operation voltage, high endurance (>1.4 × 102 cycles), and large retention memory window (>105). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.
Highlights
Flexible electronics are critical technologies for the development of wearable electronic equipment so that various electronic components, such as, organic light-emitting diodes (OLEDs), solar cells, sensors, and thin film transistors (TFTs), have been widely demonstrated on flexible substrates by many researchers[1,2,3,4,5,6,7,8,9]
The widely recognized physical mechanism in RRAM devices can be divided into two categories, one is the oxide resistive random access memory (OxRRAM) and the other is the conductive-bridging random access memory (CBRAM)[23,24]
The device consisted of stacked Cu/TiW/Ga2O3/Pt structure is demonstrated on low-cost polyimide (PI) substrate processed at low temperature
Summary
For both forming and set processes, the current compliance of 100 μA is crucial to avoid a permanent or hard breakdown. The Ga2O3 CBRRAM devices at 200 °C in N2 atmosphere exhibit good switching behaviors and lower Vset and Vreset caused by a considerable amount of oxygen vacancies in the oxide layer. This improvement can be attributed to these considerable oxygen vacancies which may lower the energy cost of Cu insertion into the Ga2O3 layer, and lead to the Cu migration in the switching layer[32].
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