Highly conductive SiC ceramics containing Ti2CN

Abstract

Abstract Highly conductive SiC ceramics were fabricated by sintering β-SiC and TiN powder mixture in N 2 atmosphere. SiC ceramics exhibited decreased electrical resistivity ( ρ ) with increasing TiN content. X-ray diffraction data indicated that the specimens consisted of β-SiC grains without a detectible secondary phase for low TiN content (≤2 vol%) but contained a Ti 2 CN phase as the TiN content increased. The temperature-dependent resistivity ρ ( T ) of specimens revealed semiconductor-like behavior for TiN content up to 10 vol% and metal-like behavior above 20 vol%. For the specimen with TiN content of 15 vol%, ρ ( T ) remained almost constant (2.06 ± 0.01 × 10 −3 Ω cm) in the 4–300 K range. The resistivity of metal-like specimens were as low as 3.5 × 10 −4 Ω cm for TiN content of 20 vol%. For semiconductor-like specimens, ρ ( T ) was primarily affected by N donors in the β-SiC grains. Metal-like specimens were primarily affected by metallic Ti 2 CN clusters.