Abstract
In this paper we provided an adequate approximation to an actual exposure intensity distribution (EID) for 100 kV electron projection lithography (EPL) by using a new function employing 2-Gaussian plus exponential model. We have evaluated correction accuracy of our new model using the optimum EID parameters. The parameters were extracted from measured resist linewidth exposed by using a mask with test patterns. The test patterns were resized by changing nominal EID parameters. We found that by using the new EID function with the optimum parameters the correction accuracy for pattern space dependency was improved by 8 nm. The EID function was especially effective to device patterns that had various line pitches. It was noteworthy that this simple EID function, consisting of only three terms, led to significant improvement in the correction accuracy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
