Abstract
(100)-oriented LaNiO3 (LNO) thin films were grown on Si substrates by a sol-gel method followed by a rapid thermal process at temperatures ranging from 650 °C to 800 °C. The films produced at 700 °C had a resistivity of 1.79 mΩ cm and could be used as bottom electrodes in the fabrication of ferroelectric capacitors on Si. Subsequently, a sol-gel derived Eu-doped Pb(Zr0.52,Ti0.48)O3 (PEZT) thin film with a thickness of 130 nm prepared on the LNO electrode was found to have a (100)-oriented texture. Possible reasons for the high degree of (100) orientation in PEZT thin films are given. Good ferroelectric performance was obtained for Au/PEZT/LNO capacitors. The remnant polarization (2Pr) was found to be 22 μC/cm2 at a coercive electric field (Ec) of 134 kV/cm. After 1011 polarization reversals, Pr decreased by only 15%.
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