Abstract

The electron trapping at high-field and detrapping in thin thermally nitrided silicon oxide (SiO<sub>x</sub>N<sub>y</sub>) films were studied in the present work. For lightly nitrided oxide, the effective electron trap concentration was found to increase rapidly with the nitridation duration. In addition, the detrapping ratio of trapped electrons is almost zero and independent of the detrapping time and the applied field strength up to 8 MV/cm. This observation indicates that the increased traps have deeper energy levels. For heavily-nitrided sample, the surface trap concentration decreases and the energy levels of these traps become shallower. The detrapping ratio therefore increases and is an exponential function of the field strength and detrapping time. The detrapping ratio remains unchanged if no external field is applied.

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